Reducing Rowland ghosts in diffraction gratings by dynamic exposure near-field holography

Abstract

Near-field holography (NFH) combined with electron beam lithography (EBL)-written phase masks is a promising method for the rapid realization of diffraction gratings with high resolution and high accuracy in line density distribution. We demonstrate a dynamic exposure method in which the grating substrate is shifted during pattern transfer. This reduces the effects of stitching errors, resulting in the decreased intensity of the optical stray light (i.e., Rowland ghosts). We demonstrate the intensity suppression of ghosts by 60%. This illustrates the potential for dynamic NFH to suppress undesirable periodic patterns from phase masks and alleviate the stitching errors induced by EBL.

Interference lithography based on a phase mask for the fabrication of diffraction gratings

“…The design of the phase mask emphasizes the intensity distribution of the diffracted beams, moreover a relatively equal intensity distribution is related to the subsequent practical reproduction process.In general,we consider the intensity contrast η of 0.85 or more created by two diffracted beam as a reference standard 6,7] . We use a finite element calculation method to optimize the basic parameters of the phase mask with a line density of 3000, such as duty of cycle and groove depth, in which Figures 3 (a) and (b) represent the diffraction efficiencies of zero-order and negative first-order, while the two red line intervals are the operating parameter ranges.…”

Fabrication of large UV transmission blazed gratings for slitless spectral sky survey

“…First, a photoresist layer (a) is spin-coated on fused silica (Norrman et al 2005;Qiu et al 2007). Next, a photoresist grating mask (b) is obtained by holographic scanning exposure (Ma & Zeng 2015;Lin et al 2018). A photoresist grating mask with identical thickness and profile requires complicated photoresist coating and holographic exposure.…”

Influence of Exposure Energy Control for High Voltage Pulsed Xenon Lamp on the Lithography Accuracy of Linear Grating

“…The pulsed xenon lamp power control system is the main factor affecting the energy release time [1][2][3]. In raster computing lithography, the static exposure of the lithographic threshold model is used to calculate the accuracy of the exposure energy on the grating fringe [4][5], such as the dynamic exposure energy lithography of the diffraction grating [6]. In this paper, the volt-ampere characteristics of pulsed xenon lamp are studied for the pulsed xenon lamp power supply circuit.…”