We studied electron injection from Al and Au cathodes into the conjugated polymer poly[2-methoxy,5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEH–PPV). When a thin CsF layer is inserted between MEH–PPV and Al, a substantial enhancement in electron injection is observed. Insertion of the same layer between MEH–PPV and Au does not have a similar effect, indicating that the enhancement mechanism is specific to CsF and Al. Thin Cs layers enhance electron injection regardless of the cathode metal. A mechanism that explains these observations is proposed.

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A 5 V input level shifter circuit based on depletion-mode In-Ga-Zn-O thin-film transistors (TFT) worked up to 100 kHz. By employing metal-insulator-semiconductor (MIS) active capacitor, we enhanced the bootstrapping effect and reduced the rise time of the output signal. SPICE simulation results showed that the proposed level shifter worked for wide threshold voltage range from !2 V to D1 V and the fabricated circuit exhibited the propagation delay t plh and t phl of 0.6 µsec and 0.3 µsec respectively.

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