The world largest flexible full color 6.5-inch active matrix organic light emitting diode (AMOLED) display with top emission mode on plastic film is demonstrated. The active matrix backplanes were fabricated using metal oxide thin film transistors (TFTs). The n-channel metal oxide TFTs on plastic film exhibited field-effect mobility of 17.8 cm 2 /Vs, threshold voltage of 0.4 V, on/off ratio of 1.1x 10 8 , and subthreshold slope of 0.34 V/dec. These TFT performance characteristics made it possible to integrate scan driver circuit, demux switching and compensation circuit on the panel. Bending tests were performed with TFT backplane samples to determine critical curvature radius to which the panel can be bent without TFT performance degradation. The results were compared with the calculations that took into account thicknesses and mechanical constants of flexible substrate and of thin-film layers in AMOLED device.

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In this paper we describe current trends in mobile display technology, and analyze the requirements for those displays as well as the ways of their fulfillment. We also show how active matrix displays based on organic light emitting diode (OLED) technology should provide basis for the economic manufacture of displays for mobile applications.

Integrating circuits into organic light emitting diode displays require fabrication of polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on glass substrates. In this work we evaluated the use of high pressure annealing (HPA) process of poly-Si films in H2O atmosphere to improve TFT characteristics via reducing defect density in poly-Si films. We attempted to develop a HPA process at temperatures below 600°C without causing any glass distortion and reducing the throughput. The HPA-treated poly-Si film was analyzed using various spectroscopic methods such as Raman, x-ray photoelectron spectroscopy, and transmission electron microscope, and the evaluation of the characteristics of TFTs fabricated by such poly-Si films was made. The heating at 550°C with 1MPa H2O vapor increased the carrier mobility from 8.5to20cm2∕Vs and reduced the absolute value of the threshold voltage from 9.6to6.5V, as compared with the conventional solid phase crystallization (SPC) process. The sub-threshold swings also decreased from 1.2to0.8V/decade. Since the realization of good performance in poly-Si depends on the defect density, the poly-Si formed by a combined process of SPC and HPA may be well suited for fabrication of poly-Si TFTs for flat panel displays such as liquid crystal display and active matrix organic light emitting diode that require circuit integration on panels.

We propose a new hybrid pixel driving method that combines conventional digital driving with analog compensation for the declining electrical performance that occurs as OLEDs age. Image uniformity, and thus display lifetime, is improved by directly measuring the variation in OLED voltage at each pixel for a given OLED current level and then controlling the voltage drop across its driving TFT of an individual pixel.