Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation environments. In this article, the total ionizing dose (TID) simulation of nanowire FET (NW) and FinFET was performed. Both these devices were compared and analyzed in terms of the shift of threshold voltage (V T ). The channel insulator was composed of two materials, SiO 2 and HfO 2 . To improve the accuracy of the simulation, the interfacial trap parameter of SiO 2 and HfO 2 was applied. Based on the simulation result, the NW with a larger oxide area and larger gate controllability showed less V T shift than that of the FinFET. It was therefore proved that NW had better TID resistance characteristics in a radiation environment. The gate controllability was found to affect the TID effect more than the oxide area. In addition, we analyzed the manner in which the TID effect changed depending on the V DD and channel doping.

In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inverter TID circuit simulation, both n- and p-types of FinFET and NW-FET were analyzed regarding the TID effect. The inverter operation considering the TID effect was verified using the Berkeley short-channel insulated-gate FET model (BSIM) common multi-gate (CMG) parameters. In addition, an inverter circuit composed of the NW-FET exhibited a smaller change by the TID than that of an inverter circuit composed of the FinFET. Therefore, the gate controllability of the gate-all-around (GAA) device had an excellent tolerance to not only short-channel effects (SCE) but also TID effects.