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Accurate modeling and analytical parameter extraction of the non-quasi-static small-signal model of FinFETs are presented using a three-dimensional device simulator. Using simple -and -matrices calculations, the extrinsic gate-to-drain/source capacitance and source/drain resistance are de-embedded from the small-signal equivalent circuit. The analytical parameter extractions are performed by -parameter analysis after removing the extrinsic gate-to-drain/source capacitance and source/drain resistance. Accuracy of the model and extraction method is verified with the device-simulation data up to 700 GHz. Without any complex fitting and optimization steps, the total modeling rms error of the -parameter up to 700 GHz was calculated to be only 1.9 % in the saturation region and 2.1 % in the linear region. Also, the bias dependencies of the small-signal parameters are presented.

As device size shrinks smaller, random telegraph signal (RTS) noise, which is caused by the trapping and detrapping of a single carrier will become a serious issue. In this paper, we characterized four level RTS and extracted the characteristics of two independent traps. Once the position of the trap is found in the oxide (x T ) and along the channel (y T ) with respect to source, we extracted difference between the oxide conduction band energy (E Cox ) and trap energy (E T ). Finally we introduce eight level RTS observed in some sample which indicates existence of three active traps.