We propose an electrically tunable absorber based on epsilon-near-zero (ENZ) effect of graphene embedded in a nanocavity, which is composed of metal grating and substrate. Due to strong surface-normal electric field confined in ENZ graphene in the proposed structure, greatly enhanced light absorption (~80%) is achieved in an ultrathin graphene monolayer. By electrically controlling the Fermi-level of graphene, a sharp peak absorption wavelength is tuned over a wide range. The proposed device can work as an optical modulator or a tunable absorption filter, which has a unique feature of incident angle insensitiveness owing to the ENZ effect and magnetic dipole resonance. Moreover, existence of a significantly dominant electric field and its uniformity make the device performance independent of the position of the graphene layer in the nanocavity, which provides great fabrication tolerance.

We investigated on the interaction between a single guided-mode resonance and Fabry-Perot resonance (FPR) in a high contrast grating (HCG) from a viewpoint of Fano resonance. It has been found that the background reflection due to the FPR in the HCG is useful to implement flat-top broadband reflectors via tailoring the phase polarity of Fano resonance. The novel conceptual approach was elucidated theoretically with the temporal coupledmode theory (TCMT), which was confirmed by the Si HCG broadband reflector design of 380-nm bandwidth for R > 99.9 from 1400 to 1780 nm (a fractional bandwidth of 24.5%). The TCMT model was in good agreement with the rigorous coupled wave analysis calculation. We believe that our approach provides expanded understanding on Fano resonance in a grating, enabling more intuitive and simpler design of a flat-top broadband reflector with grating structures.

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Electrically tunable permittivity of graphene provides an excellent tool in photonic device design. Many previous works on graphene-based photonic devices relied on variable absorption in graphene, which is naturally small in the optical region, and resonant structures to enhance it. Here we proposed a novel scheme to control evanescent coupling strength by inserting two graphene layers to a frustrated total internal reflection (FTIR) configuration. The resulting structure behaves in a drastically different way from the original FTIR: optical transmission though the structure can be electrically controlled from ~10−5 to ~1 with little dependency on angle of incidence. This unique feature stems from the fact that the permittivity of doped graphene can be close to zero at a certain photon energy. The electrical controllability of evanescent coupling strength can enable novel design of optical devices. As a proof-of-concept, we designed a waveguide-type optical modulator of a novel operation principle: transmission modulation depends on the electrically controlled existence of a guided-mode of the waveguide, not the variation of the ohmic loss of graphene, resulting in a low insertion loss and a small device footprint.

We propose the narrowband perfect absorbers with enormously high fabrication tolerance, which consists of a low-contrast grating and a finite distributed Bragg reflector (DBR) layer with an ultrathin absorbing medium (graphene). It is numerically shown that the proposed perfect absorber outperforms the previously proposed schemes in fabrication tolerance. According to the rigorous coupled wave analysis (RCWA) and coupled mode theory (CMT) fitting, over a considerably wide range of grating width and thickness, the proposed absorber provides a proper ratio of leakage rate to loss rate while preserving resonant condition, so that almost perfect absorption (>99.9%) can be obtained. This result is attributed to the strong electric field confinement in the DBR region rather than the grating layer owing to lower index of grating compared to DBR. In addition, without degrading the fabrication tolerance, the bandwidth of the proposed absorber can be controlled by the DBR thickness (the number of pairs) and a narrow absorbing bandwidth of sub-nanometer is achieved with 8.5 Si/SiO2 pair stacked DBR.