To analyze the characteristics of solar modules based on porous silicon involved in the flight experiment aboard a small spacecraft AIST 2D, the method of computer simulation of solar cell characteristics was used. The paper presents the procedure for developing a simulation model of photovoltaic modules in Comsol Multyphysics. The developed model allows us to investigate the current-voltage and voltage-watt characteristics of solar modules and determine the main parameters. The discrepancy between the experimental data obtained from the telemetry data from the AIST-2D with the simulation results does not exceed 5%.

The paper presents the results of modeling the mechanism for producing porous silicon on a textured surface. For various technological tasks, it is important to learn how to control the parameters of electrolytic etching to obtain the desired result. On 3D maps of the distribution of potential and etching currents, you can see that the vectors go around the pyramids and pointly etch certain sections of the surface. Confirmations of this can be seen in photographs of a scanning electron microscope and a scanning probe microscope. A detailed description of pore formation on textured porous silicon substrates has not yet been found in other works.

The research object is multilayer photosensitive structures with a porous silicon working layer and a semiconductor zinc sulphide. The purpose of this work is to study the effect of the zinc sulphide coating thickness on the structure optical properties. The reflection and photosensitivity spectral characteristics of structures with various thicknesses zinc sulphide coating were studied. It was shown that the optimal coating thickness is 0.056 micrometers.

In this work, the influence of technological parameters on the current-voltage characteristics of solar cells with porous silicon is investigated. It is shown that for photosensitive structures with a porous layer, the optimal mode is pore formation by electrochemical etching followed by diffusion. The effect of etching modes affects the character of the photosensitivity curve.

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