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A new method for improving color rendering index (CRI) and low correlated color temperature (CCT) in high‐power white‐light‐emitting diodes (WLEDs) is proposed. We used a configuration of phosphor‐in‐glass (PIG) and studied light output changes with the increment in concentration of yellow‐emitting Y3Al5O12:Ce3+ (YAG:Ce3+) phosphor. The PIG was coupled on the top of blue‐light‐emitting diodes (LED) chip (465 nm). To compensate the lack of red emission in the phosphor, Eu3+‐doped tellurium glass with different europium content was employed as a red emitter. The suitable contents of YAG:Ce3+ and Eu3+ were 7.5 weight percent (wt%) and 3 mol percent (mol%), respectively. The CRI value went from 72 to 82, whereas the CCT was reduced from 24 933 to 6434 K. The proposed structure can improve CCT as well as CRI of WLEDs just by placing a glass on top.

Ceramic phosphor plates of cerium (Ce3+)‐doped oxyfluoride were fabricated by the solid‐state reaction method. These phosphors exhibit efficient emission, with the novel feature of color tuning by varying both the doping concentration and excitation wavelength. As the Ce3+ concentration increases, the excitation spectrum broadens by a factor of 1.6, and the excitation peak wavelength shifts from 390 to 435 nm, and there is a variation in excitation energy of ~ 10%. Luminescence spectrum of low Ce3+ concentration samples is tuned from blue to green with the change of excitation wavelength. The emission peak exhibits a shift of 58 nm into the red spectral region, varying the Ce3+ concentration from 0.05 to 0.1 mol%; whereas this shift is only 6 nm when Ce3+ content changes from 0.25 to 1 mol%. Photoluminescence (PL) quantum yield has achieved 76%. The crystal structure was examined using X‐ray diffraction to explain its possible influence on the redshift luminescence. A proof of concept of white LED was constructed using a 450 nm blue LED chip with an oxyfluoride phosphor plate, showing a luminous efficacy (LE) of 64 lm/W with a color rendering index of 74.

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High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011¯0] azimuth and a superimposed diffraction along the [112¯0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm−1 and E2(high) at 488 cm−1. Hall effect measurements showed a carrier density of 9 × 1018 cm−3 and an electron Hall mobility of 340 cm2/(V s) for a film thickness of 140 nm.