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In this letter, we first examine the power reflection coefficient at the interface between InGaAsP active and passive waveguides in a bistable laser and the optical losses of the passive waveguide. An original method is used for carrier density investigations: the spontaneous emission from the uncleaved sides of the active region is analyzed. With the experimental results and from a simple model we then calculate the carrier density difference and the reflection coefficient at the interface. After that we examine the ratio of the output power from each uncoated cleaved facet and deduce the spectrally resolved modal attenuation.

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