Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers

Joindot, I.; Beylat, J.-L.

doi:10.1049/el:19930405

Cited by 47 publications

(11 citation statements)

References 1 publication

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“…IVBA is usually assumed to dominate in 1.55 m lasers and our parameter is near the upper limit of reported IVBA parameters [9]- [12]. Compressive QW strain is often expected to reduce IVBA [10], [11] but recent calculations suggest the opposite [12].…”

Section: Numerical Analysis Of Experimental Resultsmentioning

confidence: 51%

Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers

Piprek

Ábrahám

Bowers

1999

IEEE J. Select. Topics Quantum Electron.

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We investigate loss mechanisms in 1.55-m In-GaAsP-InP multiquantum-well ridge-waveguide laser diodes at room temperature. The common method of measuring light versus current curves and plotting the inverse slope efficiency versus laser length is employed to extract the internal optical loss i and the differential internal efficiency i. This method neglects the dependence of both the parameters on the laser cavity length L. We analyze physical mechanisms behind these loss parameters and their length dependence using the commercial laser simulation software PICS3D. Internal optical losses are dominated by carrier density dependent absorption. The differential internal efficiency above threshold is found to be mainly restricted by carrier recombination losses within the quantum wells, i.e., Fermi level pinning is not observed. Both loss mechanisms are enhanced with shorter cavity length due to the higher quantum well carrier density. For the shortest device measured (L = 269 m), we extract i = 20 cm 01 and i = 66%. With increasing cavity length, the loss parameters approach i = 15 cm 01 and i = 70%. From the inverse slope efficiency versus cavity length plot, we obtain i = 14 cm 01 and i = 67% independent of laser length.

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Section: Numerical Analysis Of Experimental Resultsmentioning

confidence: 51%

Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers

Piprek

Ábrahám

Bowers

1999

IEEE J. Select. Topics Quantum Electron.

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“…35 Other investigations confirm considerable IVBA in 1.2% compressively strained 1.55 m MQWs. 28 In our strain-compensated MQW, unconfined holes might enhance absorption losses ͑see Section II C͒.…”

Section: B Continuous-wave Operationmentioning

confidence: 99%

“…Because of additional loss mechanisms considered here, this number is smaller than reported previously 11 and it is now in excellent agreement with IVBA measurements on compressively strained 1.55 m MQWs. 28 The accuracy of our MQW absorption parameters depends on the accuracy of the optical losses assumed in the other layers. The highly doped p-side GaAs/InP interface could also cause strong IVBA, but it is intentionally close to the null of the optical field and its impact on the loss calculations is small.…”

Section: ͑2͒mentioning

confidence: 99%

Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers

Piprek

Babic

Bowers

1997

Journal of Applied Physics

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Using a comprehensive numerical model, we analyze the first long-wavelength (1.55 μm) vertical-cavity surface-emitting lasers operating continuous-wave at room temperature (up to 33 °C). These double-fused lasers employ strain-compensated InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs distributed Bragg reflectors that are fused on both sides of the InP spacer. The two-dimensional model includes drift and diffusion of electrons and holes, finite-element thermal analysis, calculation of the internal optical field at threshold, and k⋅p band structure computations. The simulation shows excellent agreement with a large variety of experimental characteristics. Internal laser parameters like optical losses and injection efficiency are obtained. The thermal conductivity of the multilayer mirror is found to be only one third of the value expected. Temperature dependent absorption and Auger recombination within the active region as well as lateral leakage currents are identified as dominating loss mechanisms. The analysis shows great potential for high-temperature operation of double-fused vertical-cavity lasers.

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“…The MQW heating drops strongly since only a small portion of the pillar heat passes the active region on its way to the heat sink. At 3 mA injection current, the MQW temperature rises by less than 3 K, compared to 15 in Fig. 10) connected with a maximum injection current of about 10 mA.…”

Section: Optimizationmentioning

confidence: 92%

Modeling and optimization of 1.54 μm double-fused VCSELs for cw operation above room temperature

1996

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now with Hewlett-Packard, Palo Alto, CA 94304 AB STRACTRecently, continuous wave (cw) operation of 1 .54pm vertical-cavity surface-emitting lasers (VCSELs) up to 33°C ambient temperature has been demonstrated for the first time. These devices employ strain-compensated InGaAsP multi-quantum wells and GaAs/AlGaAs distributed Bragg reflectors that are fused on both sides of the InP spacer. Lasing operation of those double-fused lasers is analyzed using a comprehensive numerical model including thermal finite element simulation, optical transfer matrix analysis, and kp band structure calculations. The simulation of pulsed laser performance measured at different temperatures delivers internal laser parameters. Intervalenceband absorption is found to be the dominating loss mechanism that prevents lasing at higher temperatures. The thermal conductivity of the multilayer mirror is only 33% of the value expected. Optimized lasers with reduced gain offset and with smaller pillar heat generation are simulated exhibiting lasing at higher temperatures. Improved heat sinking by top-down mounting shows the strongest impact leading to cw operation up to 62°C.

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Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 μm semiconductor lasers

Cited by 47 publications

References 1 publication

Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers

Cavity length effects on internal loss and quantum efficiency of multiquantum-well lasers

Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers

Modeling and optimization of 1.54 μm double-fused VCSELs for cw operation above room temperature

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