Ta 1-x Zr x N thin films were deposited by reactive magnetron sputtering aiming to investigate the influence of zirconium addition on the microstructure, hardness and high temperature oxidation resistance of the coatings. GAXRD showed that all Ta 1-x Zr x N thin films maintained ZrN crystalline structure, forming a TaZrN solid solution. Zr incorporation did not alter hardness values of Ta 1-x Zr x N coatings, however, promoted significant improvements in the oxidation resistance when compared to pure TaN thin films.

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Zirconium silicon nitride thin films with 1.6% Si addition were deposited via reactive magnetron sputtering and characterized by RBS, SEM-FEG, GAXRD, XPS and high temperature oxidation tests, aiming to investigate how silicon is structurally inserted in Zirconium nitride (ZrN) matrix. GAXRD results show a reduction in lattice parameter and grain size due to Si incorporation and XPS analyses demonstrate Si is present only in nitride form. Such observations proved the non-formation of substitutional or interstitial solid solution in ZrN, but the presence of Si 3 N 4 , even in low Si concentrations.