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Abstract-Conventional ESD guidelines dictate a large protection device close to the pad. The resulting capacitive load causes a severe impedance mismatch and bandwidth degradation. A distributed ESD protection scheme is proposed to enable a low-loss impedance-matched transition from the package to the chip. A simple resistive model adequately predicts the ESD behavior under stress according to the charged device and human body models. The large area of the distributed ESD scheme would limit its application to designs such as distributed amplifiers, rf transceivers, A/D converters, and serial links with only a few dedicated high-speed interfaces. The distributed ESD protection is compatible with high-speed layout guidelines, requiring only low-loss transmission lines in addition to a conventional ESD device.

The effects of level-width fluctuations in (n,n'y) reactions have been studied for several nuclei. Moldauer has developed a formulation for describing width-fluctuation effects in neutron inelastic scattering. 7-ray angular distributions and cross sections in (n,n'y) reactions with Mg 24 , Al 27 , Si 28 , Ar 40 , Fe 56 , and Pb 208 have been calculated on the basis of Satchler's theory, with the inclusion of width-fluctuation corrections based on Moldauer's formulation. It is found that in the region of threshold or in the cases where only a single level is excited, the inclusion of width-fluctuation effects reduces the cross sections by as much as 45%. The reduction in cross sections is smaller in the cases where several levels are excited. However, in all cases, the agreement between the experimental and calculated cross sections is significantly improved with the inclusion of width-fluctuation corrections. The shape and anisotropy of the 7 distributions are not significantly altered by the width-fluctuation corrections.

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