Distributed ESD protection for high-speed integrated circuits

Abstract

Abstract-Conventional ESD guidelines dictate a large protection device close to the pad. The resulting capacitive load causes a severe impedance mismatch and bandwidth degradation. A distributed ESD protection scheme is proposed to enable a low-loss impedance-matched transition from the package to the chip. A simple resistive model adequately predicts the ESD behavior under stress according to the charged device and human body models. The large area of the distributed ESD scheme would limit its application to designs such as distributed amplifiers, rf transceivers, A/D converters, and serial links with only a few dedicated high-speed interfaces. The distributed ESD protection is compatible with high-speed layout guidelines, requiring only low-loss transmission lines in addition to a conventional ESD device.

A 2.4 GHZ Cmos Lna Input Matching Design Using Resistive Feedback Topology in 0.13 Um Technology

“…The M5 transistor M6 transistor which have thick gate oxide, high threshold and break down voltage to protecting the gate of the input device from electro static discharge(ESD) [15]. The ESD protection device improves the noise figure by 0.1 dB because of parasitic capacitance and finite output resistance.…”

Design of a Reliable Broadband I/O Employing T-coil

“…For the broad band applications, several approaches have been proposed during the past few years. Kleveland et al [2] demonstrated the distributed ESD protection system as shown in Fig. 1.…”

“…Another drawback of this ESD protection scheme is its huge size because it needs the long CPWs between the segments to achieve a sufficient inductance. For example, the demonstrated structure in [2] its application would be limited to the ICs with a few high-speed interfaces.…”

Optimization of broadband RF performance and ESD robustness by -model distributed ESD protection scheme

“…However, for the RF systems demanding wider frequency bandwidths, the small-size ESD protection scheme still causes degradation to RF performance. Recently, the distributed ESD protection scheme has shown good broadband RF performance [2]- [5]. In [2], the gate-grounded NMOS device was used with series N-well resistor in its drain, beneficial for uniform turn-on behavior during ESD events, to achieve high ESD level.…”

“…Recently, the distributed ESD protection scheme has shown good broadband RF performance [2]- [5]. In [2], the gate-grounded NMOS device was used with series N-well resistor in its drain, beneficial for uniform turn-on behavior during ESD events, to achieve high ESD level. However, the large thermal noise contributed from the N-well resistor limited its applications in higher frequency RF systems.…”