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We developed (i) a technology to form Au-GeTiB,-Au ohmic contacts to indium phosphide Gunn diodes on the basis of n-n+-n++ epitaxial structures made on the standard and porous n +-InP substrates, (ii) batch-fabrication technique for mesas with gold heat sink, and (iii) technique for diode chip packaging in a metal-quartz package. It is shown that the Gunn diodes of both types (on the standard and porous substrates) ensure generation of microwave power in the 88-98 GHz frequency range. When operating under normal climatic conditions and at a temperature no less than -40 OC, the power output Pout of the Gunn diodes made on the porous substrates is over that of the ones made on the standard substrates. At package temperature of +75 OC, the power output of the Gunn diodes of both types decreases, with Pout value of the diodes made on the porous substrate becoming somewhat below that of the ones made on the standard substrate. We suppose that the reason for Pout decrease is the temperature dependence of thermal conductivity which is different in the standard and porous InP.