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The rates of decay, both radiative and non-radiative, have been calculated for the valence shake-up states [vp'lnl of Ne ( u = 2 ) and Ar (U=,). The only possible non-radiative decay mode is the valence-multiplet participator Auger transition: [up'] (LS)nl+[vp'](L'S)+e~, where energy far ionization i s gained through the multiplet change LS to L'S' The corresponding Auger energy is at most a few eV. For many of the initial states considered this channel is not allowed and the decay proceeds exclusively through radiative channels. When Auger decay is allowed it is found to be completely dominant over the radiative paths, with typical fluorescence yields of the order of IO-'%. Such considerations can be of cntical importance in the analysis o f direct double-ionization data. The decay rates are calculated within the single-configuration non-relativistic Hahree-Fock approximation. Partial decay rates, radiative and non-radiative, for all channels are presented. The appearance of Auger spectra resulting from the decay of a non-resonantly excited shake-up series is discussed and a simple method of modelling is presented. The recent low-energy electron spectra of Becker et 01 are discussed in the light ofpresent results. ,,.L,.rrL .z,A>, _..". l.wY..-". Weighted average over the [ v s~p ] (~P~, , ,~) levels. The spin-orbit splittings are o f the order of 0.2 ev. Optical data compiled by Barhkin and Stoner (1975). These values include averaging over the [ U~~] ( ' P~, , ,~) levels. The spin-orbit Splittings are of the order of 0.1 eV for Ne and 0.2 eV far Ar.

We deposited SmBCO thin films on BaZrO 3 (BZO)-buffered MgO (100) substrates by an off-axis magnetron sputtering method. SmBCO films were deposited at a fixed condition on stoichiometric and Zr-rich BZO-buffered MgO substrates. We found that the crystal orientation of SmBCO films changed from a-axis to c-axis orientation by using Zr-rich BZO. We speculate that the reaction between excess Zr oxides on the buffered substrates and deposited species at the initial stage of the SmBCO deposition is important in inducing these phenomena.