The kinetics of phase separation and growth of Si precipitates during high-temperature annealing of nonstoichiometric SiOx films is theoretically studied. The mechanisms of silicon diffusion and capture by Si precipitates as well as oxygen emission and out diffusion from the Si precipitate interface toward the silicon oxide bulk are compared. The experimental kinetics of phase separation within 1s annealing SiOx films at 1000°C can be explained by the latter mechanism involving either neutral or negatively charged oxygen atoms. The maximum values of the activation energy of oxygen emission are estimated to match the simulation results to the experimental data.

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