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The article deals with the filamentous Si0,97Ge0,03 crystals with transverse dimensions of 40 ± 2 μm grown by the method of chemical transport reactions in the closed bromide system using gold as a growth initiator. The focus of research was the influence of proton irradiation with doses up to 1∙1017 p+/cm-2 and the following thermal treatments at temperatures of 200 - 500°C on the magnetic susceptibility of these crystals. The dependence of the magnetic susceptibility on the intensity of the magnetic field of the proton irradiated filamentous Si0,97Ge0,03 crystals is described within the framework of the Langevin atom paramagnetism model and explained by the formation of defects of the vacancy type. The revealed increase in the radiation stability of Si0,97Ge0,03 crystals followed the combined effect of radiation and subsequent thermal treatments.

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By the method of chemical transport reactions in the closed halogen system Si-Au-Pt-B-Br, whiskers Si_1-xGe_x x = 0.01-0.08 of transverse dimensions 0.1-100 μm were grown. Structural and magnetic properties of the obtained crystals are investigated. The method of scanning electron microscopy showeds that on the surface of needle-like crystals, with transverse dimensions of 50-80 microns, a porous shell with a thickness of 50-60 nm is present. From the analysis of the energy spectra of X-rays, it was found that the surface shell contains significant concentration atoms of oxygen and of carbon. In turn, oxygen and carbon peaks were not detected on the inner layers of samples. It has been established that the chemical etching of the surface layer of crystals leads to the improvement of their structural and magnetic properties.