The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The magnetic, micromechanical and structural properties of annealed silicon single crystals have been experimentally studied. The distribution of defects formed at different annealing temperatures has been studied. The correlation between changes of magnetic susceptibility, microhardness and rearrangement of structural defects in crystals after their heat treatment is revealed. Concentrations and sizes of magnetically ordered clusters are estimated. Interpretation of the obtained experimental results is offered.

Вивчено вплив потоку швидких нейтронів реактора (Е = 2 МeВ, Ф = 2•10 14 н/см 2) на вольт-амперні та вольтфарадні характеристики, інтенсивність електролюмінесценції потужних ІnGaN/GaN світлодіодів на кремнієвовуглецевій підкладинці та на кремнієвій підкладинці із золото-олов'яним контактом. Виявлено, що величина та знак зміни тунельних струмів після радіаційного опромінення у світловипромінюючих ІnGaN/GaN гетероструктурах суттєво залежить від підкладинки. Ключові слова: потужні ІnGaN/GaN світлодіоди, опромінення, вольт-амперні характеристики. EFFECT OF NEUTRON IRRADIATION ON CHARACTERISTICS OF POWER ІnGaN/GaN LIGHT-EMITTING DIODES Effect of the fast neutron flux reactor (E = 2 MeV, Ф = 2•10 14 n/cm 2) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power ІnGaN/GaN LEDs on the SіC and AuSn/Si substrates are studied. It was revealed that radiation hardness of InGaN/GaN heterostructures depend on the substrate.

The article deals with the filamentous Si0,97Ge0,03 crystals with transverse dimensions of 40 ± 2 μm grown by the method of chemical transport reactions in the closed bromide system using gold as a growth initiator. The focus of research was the influence of proton irradiation with doses up to 1∙1017 p+/cm-2 and the following thermal treatments at temperatures of 200 - 500°C on the magnetic susceptibility of these crystals. The dependence of the magnetic susceptibility on the intensity of the magnetic field of the proton irradiated filamentous Si0,97Ge0,03 crystals is described within the framework of the Langevin atom paramagnetism model and explained by the formation of defects of the vacancy type. The revealed increase in the radiation stability of Si0,97Ge0,03 crystals followed the combined effect of radiation and subsequent thermal treatments.