Influence of growth impurities on thermal defect formation in monocrystalline silicon

Pavlovskyy, Yu. V.; Berbets, O.V.; Lytovchenko, P.G.

doi:10.15330/pcss.22.3.437-443

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…It should also be noted that the density of dislocations in silicon wafers, formed as a result of the same technological modes and operations (including the same RS after phosphorus diffusion), depends on the source material: concentration of point defects, oxygen precipitates, resistivity. Point defects and precipitates, in particular, become the centers of formation of dislocation loops during heat treatment [7,9]. Besides, with decreasing resistivity of the substrate material, mechanical stresses in it increased, caused by the introduction of impurities during the growth of the ingot.…”

Section: Influence Of the Substrate Materials On The Formation Of Dis...mentioning

confidence: 99%

Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents

Kukurudziak¹

2022

J. Nano- Electron. Phys.

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In the manufacture of p-type silicon-based p-i-n photodiodes (PDs), it was found that when the time of phosphorus diffusion increases, the yield of fit products significantly decreases. Up to 10 % are the rejects as to external appearance, the rest -as to the spread of dark current levels of PD responsive elements (REs), since the double spread of dark currents is considered a defect. Probably, the above occurrence might be caused by non-uniform distribution of defects across REs because of the increase in phosphorus impurity. An additional investigation was required to find out the cause of non-uniform distribution of dark currents and to establish the optimal concentration of impurities, which would provide for a low dark current with minimum spread. To study the effect of the surface resistance of the n + -layer on the concentration of dislocations and their distribution, PDs were made with different duration of the predeposition, accordingly, with different values of the surface resistance. To reveal the nature of the distribution of dark currents on REs, defective crystals were studied using selective etching. It was established that conditions for the occurrence of structural defects within one ingot may be different due to the spread of specific resistance. The dependence of the dislocation density on the surface resistance after phosphorus diffusion was studied. It was noted that REs of a high level of dark currents were characterized by an increased concentration of dislocations as compared to the characteristic density for good crystals at a given surface resistance. The actual reasons for the dislocations distribution non-uniformity are the irregular distribution of point defects generated during oxidation and the presence of microdefects formed during mechanical or chemical-dynamic polishing. When locally increased numbers of growth defects and point defects acquired during the mechanical, chemical or thermal operations are superimposed, critical faults and spread of dark currents with maximum values are observed.

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Section: Influence Of the Substrate Materials On The Formation Of Dis...mentioning

confidence: 99%

Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents

Kukurudziak¹

2022

J. Nano- Electron. Phys.

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Defect Formation on the Surface of Silicon Substrates after Various Technological Operations

Kukurudziak,

Lipka,

Andreeva

2023

2023 IEEE 13th International Conference on Electronics and Information Technologies (ELIT)

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Influence of growth impurities on thermal defect formation in monocrystalline silicon

Cited by 2 publications

References 8 publications

Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents

Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents

Defect Formation on the Surface of Silicon Substrates after Various Technological Operations

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