A novel analysis of homogeneous nucleation of dislocations in sheared twodimensional crystals described by periodized discrete elasticity models is presented. When the crystal is sheared beyond a critical strain F = Fc, the strained dislocation-free state becomes unstable via a subcritical pitchfork bifurcation. Selecting a fixed final applied strain F f > Fc, different simultaneously stable stationary configurations containing two or four edge dislocations may be reached by setting F = F f t/tr during different time intervals tr. At a characteristic time after tr, one or two dipoles are nucleated, split, and the resulting two edge dislocations move in opposite directions to the sample boundary. Numerical continuation shows how configurations with different numbers of edge dislocation pairs emerge as bifurcations from the dislocation-free state.

Discrete models of dislocations in cubic crystal lattices having one or two atoms per unit cell are proposed. These models have the standard linear anisotropic elasticity as their continuum limit and their main ingredients are the elastic stiffness constants of the material and a dimensionless periodic function that restores the translation invariance of the crystal and influences the dislocation size. For these models, conservative and damped equations of motion are proposed. In the latter case, the entropy production and thermodynamic forces are calculated and fluctuation terms obeying the fluctuation-dissipation theorem are added. Numerical simulations illustrate static perfect screw and 60$^\circ$ dislocations for GaAs and Si.Comment: 26 pages, 4 figure

A toy model of two dimensional nanoindentation in finite crystals is proposed. The crystal is described by periodized discrete elasticity whereas the indenter is a rigid strain field of triangular shape representing a hard knife-like indenter. Analysis of the model shows that there are a number of discontinuities in the load vs penetration depth plot which correspond to the creation of dislocation loops. The stress vs depth bifurcation diagram of the model reveals multistable stationary solutions that appear as the dislocation-free branch of solutions develops turning points for increasing stress. Dynamical simulations show that an increment of the applied load leads to nucleation of dislocation loops below the nanoindenter tip. Such dislocations travel inside the bulk of the crystal and accommodate at a certain depth in the sample. In agreement with experiments, hysteresis is observed if the stress is decreased after the first dislocation loop is created. Critical stress values for loop creation and their final location at equilibrium are calculated.Comment: 22 pages, 5 figures, to appear in Chaos, Solitons and Fractal

No abstract