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We report on the device and circuit performance of Delta-Doped Complementary Heterostructure Insulated Gate Field Effect Transistors (C-HIGFETs) which make use of a high lnAs mole fraction (y-value) pseudomorphic InyGal-yAs channel along with a subchannel deltadoped Si layer to adjust the n-HIGFET and p-HIGFET threshold voltages. Results are presented showing that increasing the y-value of the In Gal. As channel up to y = 0.25 enhances both the n-hGFl!T and the p-HIGFET device performance as evidenced by the high transconductance values (i.e., Gmn >300 mS/mm and Gmp >70 mS/mm respectively) for 1pm gate length devices. We present results from lnyGal-YAs channel (y-0.25) C-HIGFET ring oscillators with less than 4 pW/gate standby-power consumption.These C-HIGFET ring oscillators exhibit gate delays as low as 143 psec at a standby-power of 40 pW/gate and a switching-power-delay product of 250 fJ. We also report on the first fully functional Delta-Doped C-HIGFET 1K X 4 SRAM operating at a 284 MHz clock frequency and consuming only 183 mW.introduction

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