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This work demonstrates the feasibility of a law area, low consumption, Low Noise Amplifier (LNA) for 40GHz wireless communications in SiGe:C BiCMOS Technology . The two stage LNA was achieved using a simple approach due to the micro-strip line characteristics and exhibits B gain of 23dB and 3.7dB noise figure at 4OGHz for a total DC power consumption less than 20mW. Linearity measurements provide an ITPl of -12dSm and an TIP3 better than 14dBm. This allows a dynamic range of 62dB and a third order free spurious dynamic range around SldB. Indev Terms -BiCMOS, HET, linearity, Low NoiseAmplifier, millimeter-wave range, noise, SiGe.

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