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It is generally known that a highly transparent ArF resist is preferable for the bottom ARC process to maintain the vertical sidewall of resists patterns. Therefore, we developed some transparent resists with a low concentration of photo acid generator (PAG). However, our careful analysis clarified that the completely transparent resist caused a serious deterioration of the Exposure-Defocus(E-D) process window. Therefore, there should be an optimum transparency (PAG concentration) in the ArF resists. Our experiment clarified that the medium transparency (53-60%/O.5 iim) resist had the largest E-D process window. This resist produced l2Onm nested lines using an ArF stepper (NA=O.60, a =0.70) without any resolution enhancement technique.