The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

2.0x µm widely tunable external cavity lasers realized by combining a GaSb gain chip with a silicon photonics waveguide circuit for wavelength selection are demonstrated. Wavelength tuning over 58 nm from 2.01 to 2.07 µm is demonstrated. In the silicon photonic integrated circuit, laser feedback is realized by using a silicon Bragg grating and continuous tuning is realized by using two thermally tuned silicon microring resonators (MRRs) and a phase section. The uncooled laser has maximum output power of 7.5 mW and threshold current density of 0.8 kA/cm². The effect of the coupling gap of the MRRs on tunable laser performance is experimentally assessed. A side mode suppression ratio better than 52 dB over the full tuning range and in the optimum operation point of more than 60 dB is achieved for the laser with weakly coupled MRRs.

We present high-power single-spatial mode electrically pumped GaSb-based superluminescent diodes (SLDs) operating in the 1.95 to 2.45 μm wavelength range in continuous-wave (CW). MBE grown GaSb-based heterostructures were fabricated into single-angled facet ridge-waveguide devices that demonstrate more than 40 mW CW output power at 2.05 μm, to >5 mW at 2.40 μm at room-temperature. We integrated these SLDs into an external cavity (Littrow configuration) as gain chips and achieved single-mode CW lasing with maximum output powers exceeding 18 mW. An extremely wide tuning range of 120 nm per chip with side-mode-suppression-ratios >25 dB was demonstrated while maintaining optical output power level above 3 mW across the entire tuning range.

Infrared spectral range between 1.7 and 2.5 µm is of particular interest for biomedical sensing applications due to the presence of first overtone C-H stretch and a combination of stretch and bending vibrations of C-H, N-H, and O-H bonds. These vibrations are molecule specific and can be used to selectively sense important biomolecules such as glucose, lactate, urea, ammonia, serum albumin, etc. In this paper, we review recent developments of swept-wavelength lasers based on GaSb type-I gain-chip technology, their key performance parameters for spectroscopy applications and provide experimental data on spectroscopic sensing of the key biomolecules both in synthetic solutions as well as whole blood.

The infrared spectral region beyond 1.7 μm is of utmost interest for biomedical applications due to strong overtone and combination absorption bands in a variety of important biomolecules such as lactates, urea, glucose, albumin, etc. In this article, we report on recent progress in widely tunable swept-wavelength lasers based on type-I GaSb gain-chip technology, setting a new state-of-the-art in the 1.7-2.5 μm range laser sources. We provide an application example for the spectroscopic sensing of several biomolecules in a cuvette as well as an experimental demonstration of a non-invasive in-vivo sensing of human serum albumin through the skin.