High power continuous-wave GaSb-based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95–2.45 <i>μ</i>m wavelength range

Vizbaras, Kristijonas; Dvinelis, Edgaras; Šimonytė, Ieva; Trinkūnas, Augustinas; Greibus, Mindaugas; Songaila, Ramūnas; Žukauskas, Tomas; Kaušylas, Mindaugas; Vizbaras, Augustinas

doi:10.1063/1.4926367

Cited by 36 publications

(23 citation statements)

References 13 publications

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“…In this paper we report, to the best our knowledge, the first broad wavelength coverage DFB laser array in the 2 μm wavelength range, which is realized on a heterogeneous III-V-on-silicon platform and uses a W-shaped InGaAs/ GaAsSb Type II active region. In continuous-wave (CW) regime, the laser array can cover a wavelength range of 150 nm (2.28-2.43 μm), which exceeds the wavelength coverage (∼120 nm) of a recently demonstrated 2.3 μm GaSb-based external cavity laser based on a bulky Littrow configuration [21]. By varying the laser drive current, 10 nm continuous tuning is achieved using four DFB lasers with the same DFB grating period but different III-V waveguide widths.…”

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confidence: 99%

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Wang¹,

Sprengel²,

Boehm³

et al. 2017

Optica

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Silicon photonics is a promising integrated-optics platform for optical communication and sensing applications. Integrating 2-3 μm wavelength widely tunable lasers on silicon photonic integrated circuits enables fully integrated spectroscopic sensors with different potential applications such as multi-species trace gas spectroscopy and bio-molecule detection. Here, we demonstrate a continuous-wave (CW) operated III-V-on-silicon distributed feedback (DFB) laser array covered a broad wavelength range from 2.28 to 2.43 μm. CW operation up to 25°C and an on-chip output power of 2.7 mW in a single mode at 5°C is achieved for lasers operating at 2.35 μm wavelength. Four-channel DFB laser arrays with a continuous tuning range of 10 nm and side mode suppression ratio of 40 dB over the whole range are also presented. This work is a major advance toward chip-scale silicon photonics spectroscopic sensing systems. Gas sensing based on short-wave infrared and mid-infrared absorption spectroscopy has been proven to be a reliable technology for trace-gas measurements with fast response time and a high degree of specificity to the target gas [1,2]. However, most present optical sensors consist of discrete optical components and a bulk gas cell, which limits their viability for applications in portable and economical gas analysis. Integrated photonics platforms offer the potential to realize miniature and low-cost optical gas sensors [3][4][5][6]. As one of the most promising integrated photonics platforms, silicon photonics has been well-developed for optical communication applications during the past decade [7]. In recent years, its applications have been extended to sensing applications, including on-chip spectroscopic sensing [8]. Silicon photonics gas sensors that target different components have been demonstrated, including those that use, e.g., microring resonators [9,10] or spiral waveguides [11] to interact with the gas medium. In these gas sensors, the light from an external laser source is coupled into the silicon chip for the on-chip absorption spectroscopy measurement. The development of fully integrated silicon photonic integrated circuits (PICs) in the 2.3 μm wavelength range enable compact gas sensors with high sensitivity, since many important industrial gases (e.g., NH 3 , CO, and CH 4 ) have strong absorption lines in this wavelength range [12]. It is also valuable for bio-sensing applications, such as non-invasive blood glucose measurements [8,13]. For a compact silicon photonics spectroscopic gas sensor, an integrated and tunable single-mode laser is the key component that should be developed. Recently, heterogeneously integrated III-V-on-silicon Fabry-Perot lasers around 2 μm were realized using strained InGaAs Type I heterostructures [14]. However, the emission wavelength range of laser sources based on the InP-based Type I material is limited to around 2.3 μm [15]. Recently, we demonstrated 2.3x μm heterogeneous III-Von-silicon distributed feedback (DFB) laser sources based on an InP-based Type II heteros...

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confidence: 99%

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Wang¹,

Sprengel²,

Boehm³

et al. 2017

Optica

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“…Hybrid/heterogenous [36] silicon photonic diode lasers enable additional degrees of freedom as compared to III -V lasers by combining the best of both worlds. SiPh offers low propagation loss and high integration densities while III -V material contributes high gain values [37] and the flexibility for bandgap engineering via changes in material composition [38], realizing high performance, novel light sources; examples are the high power, sub-kHz linewidth heterogenous silicon laser [39] as well as hybrid/heterogenous silicon lasers that operate in the spectroscopically imperative wavelength region above 2 µm [40]. Hybrid integration allows for III -V and silicon to be individually optimized, while the heterogenous approach enables compact footprint in addition to demonstrating potential for high-volume production [36].…”

Section: Introductionmentioning

confidence: 99%

Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm

Sia

Wang

et al. 2020

Opt. Express

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In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H 2 O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.

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“…9,13 Although a larger angle can give low reflectivity, it will reduce the output beam coupling because of a larger beam exit angle. The cavity oscillations were further suppressed by defining a non-index guided region at the one-end of the chip; i.e., by preventing etching of the ridge waveguide at that end.…”

Section: A)mentioning

confidence: 99%

“…The output-power represents a 50% improvement compared to the recent results on the GaSb-based long-wavelength SLD. 9 At room-temperature, the SLD has a spectral full-width at half maximum (FWHM) of 60 nm. These results are enabled by the use of GaInSb quantum wells (QWs) placed in a long waveguide, which provide strong material gain and strong amplified spontaneous emission (ASE).…”

mentioning

confidence: 99%

High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element

Zia

Viheriälä

Koskinen

et al. 2016

Applied Physics Letters

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The characteristics and the fabrication of a 1.9 μm superluminescent diode utilizing a cavity suppression element are reported. The strong suppression of reflections allows the device to reach high gain without any sign of lasing modes. The high gain enables strong amplified spontaneous emission and output power up to 60 mW in a single transverse mode. At high gain, the spectrum is centered around 1.9 μm and the full width at half maximum is as large as 60 nm. The power and spectral characteristics pave the way for demonstrating compact and efficient light sources for spectroscopy. In particular, the light source meets requirements for coupling to silicon waveguides and fills a need for leveraging to mid-IR applications photonics integration circuit concepts exploiting hybrid integration to silicon technology.

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High power continuous-wave GaSb-based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95–2.45 μm wavelength range

Cited by 36 publications

References 13 publications

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Compact silicon photonic hybrid ring external cavity (SHREC)/InGaSb-AlGaAsSb wavelength-tunable laser diode operating from 1881-1947 nm

High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element

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