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초록: 본 연구에서는 산소 플라즈마 처리된 poly(dimethylsiloxane)(PDMS) 기판 위에 은 전극을 사용하여 신축성 있 는 전극을 제작하였다. 신축성있는 기판 상에 은 전극을 직접 증착함으로써 복잡한 전사과정을 피할 수 있다. 간단 한 산소 플라즈마 처리를 통해 신축성 기판표면에 탄소 불순물을 줄이고 은 전극과 신축성 기판 사이의 접착력을 강 화할 수 있어서, temporal 및 prolonged mechanical strain 측정 시, 전극의 신축 능력과 안정성을 향상시킬 수 있었다.Abstract: In this study, stretchable electrodes are demonstrated with silver electrodes on an oxygen-plasma-treated poly(dimethylsiloxane) (PDMS) substrate. The direct deposition of a silver electrode on a compliant substrate was used to avoid a complicated transfer process. We found that the stretching capability and stability under temporal and prolonged mechanical strain are improved by a simple oxygen plasma treatment on the compliant substrate due to the modified surface with reduced carbon impurities and enhanced adhesion properties between the Ag and the compliant substrate. The results show that the oxygen plasma treatment is useful for forming highly stable metal electrodes on a compliant substrate because it minimizes the number of processing steps needed.

In this paper, low-temperature, solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) with annealing temperatures as low as 300°C were fabricated using different annealing gases of He, N2, and O2 and their electrical characteristics and long-term stability were analyzed. The field-effect mobility was improved by nearly two times for the a-IGZO TFTs annealed in helium ambient (He sample) in comparison with those annealed in oxygen and nitrogen ambient environments. The subthreshold slope and threshold voltage were also improved for the a-IGZO TFTs annealed in the helium ambient environment due to the low defect density of states in the sub-bandgap region. However, X-ray photoelectron spectroscopy measurements indicate that the electrical characteristics of the low-temperature solution-processed a-IGZO TFTs show severe channel-length dependencies due to the oxygen vacancy variations in the active region. In addition, long-term stability measurements up to seven days reveal that due to the inherently low electron density and high defect density of states in the active region, an increase in the carrier density in the active region induces a large negative shift of the threshold voltage without changing the field-effect mobility or subthreshold slope. It is understood that low-temperature solution-processed a-IGZO TFTs strongly depend on the formation of oxygen vacancies, which can be resolved by controlling the indium mole fraction under a helium annealing condition.

In this study, Ag stretchable electrodes with a very high stretching capability, exceeding 59 %, were fabricated using a combination of prestretching and O2 plasma treatments on poly(dimethylsiloxane) substrates. The resistance increased by a factor of only 4.8 compared to the initial value when 59% strain was applied. The high performance of the O2-plasma-treated sample is attributed to the initial formation of large periodic wavy structures without cracks, which effectively release the external strain under the stretched condition. In addition, the sample showed a stable operation with no variation in the resistance under prolonged and cyclic strains of 20 % for 500 cycles. Owing to the simple fabrication process and high performance, it is expected that the Ag electrodes can be used for high-end applications such as interconnections of devices and circuits.