A novel current programmed pixel and driving method for AMOLED displays have been developed. The newly developed pixel, which is called ‘Current‐Copy Pixel’, shows the highest potential to suppress luminance non‐uniformity. This pixel design was implemented into our developed full color AMOLED display, and its high luminance uniformity was confirmed.

The optimum condition of plasma-enhanced chemical vapor deposition to deposite silicon nitride (SiN x ) film and its application as a gate insulator of a-Si thin-film transistor (TFT) have been investigated. The internal stress of SiN x in the range of 4.3×109 dyn/cm2 tensile to 8.0×109 dyn/cm2 compressive is found to be controllable by changing the ratio of H2 and N2 in the source gases without affecting the optical band gap. Satisfactory TFT characteristics and high reliability are realized by using a gate insulator of SiN x having either stoichiometric or N-rich composition which shows the large optical band gap.

CdSe films can be grown simply by dipping Cd metal in an SeO2-containing acid solution. These film electrodes without any additional treatment exhibit fairly good photoanodic characteristics. This enables us to fabricate a large-scale photoelectrochemical cell very easily.