Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities Appl. Phys. Lett. 101, 132105 (2012) Effects of Co content on the structural, luminescence, and ferromagnetic properties of Zn1−xCoxSy films J. Appl. Phys. 112, 063712 (2012) Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice J. Appl. Phys. 112, 063512 (2012) Leaky mode analysis of luminescent thin films: The case of ZnO on sapphire J. Appl. Phys. 112, 063112 (2012) Observation of In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.

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We report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths (Xj) formed for the n+/p and p+/n junctions were 7.6 nm and 6.1 nm with sheet resistances (Rs) of 860 ohms/sq. and 704 ohms/sq., respectively. By reducing knocked-on oxygen during ion implantation in the n+/p junctions, Rs was decreased by between 5% and 15%. The lowest Rs observed was 235 ohms/sq. with a junction depth of 21.5 nm. Hall measurements clearly revealed that knocked-on oxygen degraded phosphorus activation (carrier concentration). In the p+/n Ge junctions, we show that ion implantation damage induced high boron activation. Using this technique, Rs can be reduced from 475 ohms/sq. to 349 ohms/sq. These results indicate that the potential for forming ultra-shallow n+/p and p+/n junctions in the nanometer range in Ge devices using FLA is very high, leading to realistic monolithically-integrated Ge CMOS devices that can take us beyond Si technology.

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