The article deals with the technological process of manufacturing CMOS integrated circuits on KNS (silicon on sapphire) structures for space purposes. The technology is based on an n-type CMOS process with one level of polysilicon and two levels of metal. The components of the technological process are analyzed. The sequence of the technological process and its features are given. An example of a description of one of the elements is considered.

In space, ionizing radiation is created by several sources. The most important generalized concepts about the degree of the Influence of space plasma is manifested through the electrification of dielectric protective and thermally insulating coatings inside the structure of electronic equipment. The article discusses the main effects of ionizing radiation on the semiconductor components of space communication systems.