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We present a resonant magnetic field sensor based on microelectromechanical systems technology with optical detection. The sensor has single resonator composed of two orthogonal silicon beams (600 µm × 26 µm × 2 µm) with an integrated mirror (50 µm × 34 µm × 0.11 µm) and gold tracks (16 µm × 0.11 µm). The resonator is fabricated using silicon-on-insulator wafer in a simple bulk micromachining process. The sensor has easy performance that allows its oscillation in the first bending vibration mode through the Lorentz force for monitoring in-plane magnetic field. Analytical models are developed to predict first bending resonant frequency, quality factor, and displacements of the resonator. In addition, finite element method models are obtained to estimate the resonator performance. The results of the proposed analytical models agree well with those of the finite element method models. For alternating electrical current of 30 mA, the sensor has a theoretical linear response, a first bending resonant frequency of 43.8 kHz, a sensitivity of 46.1 µm T−1, and a power consumption close to 54 mW. The experimental resonant frequency of the sensor is 53 kHz. The proposed sensor could be used for monitoring in-plane magnetic field without a complex signal conditioning system.

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