No abstract

The impact of radiation damage on the device performance of 4H‐SiC Schottky barrier diodes (SBDs) with RuWOx Schottky contacts, which were irradiated at room temperature with 9 MeV electrons (absorbed dose of 50 Gy), is studied by current–voltage (I–V) and capacitance–voltage (C–V) methods measured in the temperature range of 85–400 K. We have observed the radiation‐induced decrease of the Schottky barrier height (SBH) from original Φb = 1.13–1.06 eV, increase of the ideality factor from n = 1.14 to 1.39 and the noticeable increase of the saturation current from IS = 7.29 to 77.31 pA and the series resistance from RS = 2.9 to 7.9 Ω calculated from I–V measurements at T = 300 K. As a result of electron irradiation deep energy levels originated in the structure and caused the increase of serial resistance and leakage current. The DLTS results have shown several deep energy levels, e.g., EC – 0.637 eV pointing to radiation‐induced Z1/2 structural defects in SiC. No degradation is observed from the measured C–V curves. The experimental value of the effective Richardson constant A* = 50.68 A/cm2/K2 for the irradiated sample was calculated from the modified Richardson plot.

No abstract

In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The correlation between deep levels observed on different structure types is discussed. 1.

No abstract