This paper describes radiation test results of a radiation hard CMOS technology with 1.0 gm minimum geometry features. The radiation goals of this technology are to ensure the MOS devices are functional after 10 Mrad total dose irradiation, are single event upset hardened to less than lE-10 errors per bit-day, are transient upset immune to 1E9 rads/sec and are latch-up free.

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The processing and design geometric scaling effects on t h e s o f t -e r r o r t o l e r a n c e l e v e l s of t h e 16K 2-pm technology and t h e 256K 1-pm technology CMOS SRAMs are separated by f a b r i c a t i n g t h e 16K 2-pm d e s i g n w i t h t h e 1-pm process. Although the 1-pm twin-tub process is inherently more t o l e r a n t t h a n t h e p-well p r o c e s s t o s o f t e r r o r s , t h e densely packed 1-pm memory c e l l s become v e r y s o f t b e c a u s e o f t h e dominant e f f e c t of the channel w i d t h reduction. An advanced device-plus-circuit simulator was used to c a l c u l a t e t h e d i f f e r e n t i a l c o n t r i b u t i o n from each o f t h e v e r t i c a l a n d l a t e r a l d i m e n s i o n a l c h a n g e s i n v o l v e d i n t h e t e c h n o l o g y t r a n s i t i o n . Good a g r e e m e n t b e t w e e n t h e s i m u l a t i o n s a n d t h e experimental data is reached by p r o p e r l y c o r r e c t i n g t h e 2D m o d e l t o a c c o u n t f o r t h e p h e n o m e n a l saturation effect involving very heavy ions.

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