CdZnTe has been characterized by means of polarization-field hysteresis and current–voltage measurements. The CdZnTe is shown to be ferroelectric with polarization endurance up to 107 poling cycles. The polarization is significantly influenced by free carriers and can be switched by light illumination. The capacitance of CdZnTe consists of ferroelectric and depletion components. On the other hand, electrical conduction in the CdZnTe is modulated by the polarization, leading to hysteresis in the current–voltage characteristics. Writing and reading measurement has shown a reading-current difference of 0.015 mA at a nondestructive voltage for the binary digits.

We report reproducible bipolar resistive memory devices based on Au/ZnO nanowire networks (ZnO NWNs)/ITO, which show a high Ron/Roff ratio (∼104) and narrow dispersion of set and reset threshold voltages. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and space charge limited current, respectively. The switching mechanism is confirmed in terms of the formation and rupture of conductive filaments, with oxygen vacancies localized on the ZnO NWNs surface involved in. The Au/ZnO NWNs/ITO devices presented in our work show potential applications in the next generation nonvolatile memory field. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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A computer-automated Rutherford backscattering/channeling (RBS/C) system is developed to provide in situ ion beam analysis of the accelerator-TEM system in Wuhan University. The basic system components are a PC equipped with a multichannel analyzer data acquisition board, motion control hardware including the Panmure stepping motor controller and integrated circuit modules, and a Labview programmed operating system with associated electronics. Single crystalline Si(001) and ZnO(001) implanted with Mn ions were characterized with this computerized setup. The crystalline quality 𝜒min and channeling half angle of Si(001) were measured to be 4.65% and 0.52 ∘ , respectively, which are comparable to theoretical values 4.2% and 0.32 ∘ . The ion implantation induced damage depth profile derived from channeling and random spectrum is in reasonable agreement with the result calculated by the SRIM Monte-Carlo simulation code.