CW irradiation at 830 nm and 5.0 J/cm(2) fluence induces a small temperature increase at the surface and at 1 mm in depth. The smaller effects seen in white mice might be due in part to reflection. This suggests that the thermal effects of irradiation at 830 nm are unlikely to explain the LLLT effect. However skin color should be considered, particularly at higher fluences. Further investigations are warranted to correlate the melanin content of the skin with observed LLLT effects.

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These results demonstrate that the salutary effects of LLLT on wound healing are temperature independent in this model.

A new silicon material, silicon-on-defect-layer (SODL), has been measured by secondary ion mass spectrometry (SIMS) and spreading resistivity (SR) measurements. SIMS data show that the buried defect-layer in SODL consists of silicon oxide due to the gettering of intrinsic oxygen by proton-implanted damage. Furthermore, SODL procedure makes a silicon wafer contain much fewer oxygen in surface-layer on the defect-layer, resulting in a purfied surface-layer. Measurements of SR indicate that the surface-layer of n-type silicon wafer was converted to p-type silicon after SODL procedure. A metal oxide semiconductor (MOS) device with a value of the electron mobility in the inversion mode of 714 cm2/(V s) was fabricated on SODL material. Like isolation function of a well in a complementary MOS (CMOS) device, the p-n junction in SODL material could play a role of isolation between the surface-layer and bulk. In addition, by reducing the implantation energy, SODL technology for making p-n junction, in which built-in field separates light-generated electrons and holes, is a candidate to make cheap solar cells by using low-quality low-cost silicon.

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