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The galvanostatic anodization of n‐type normalGaAs in methanolic KOH concentrations of 0.05, 0.20, and 0.50N has been studied. We report measurements of the growth constants, current efficiencies, oxide density, and dielectric strength. With the exception of oxide density these parameters are found to depend on the electrolyte concentration. It will be shown that oxides grown in the 0.2N electrolyte have the most reproducible growth parameters, and gravimetric measurements on these oxides coupled with a sectioning technique permit a direct measurement of the oxide density which is found to be 4.78 g/cm3. Furthermore the dielectric strength of this oxide ranges between 4 normaland 5×106V/normalcm and appears to be independent of surface treatment or oxide annealing.

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