This paper presents, the studies of the influence of (radio frequency) RF power on the size distribution and visible photoluminescence (PL) of SiNx thin film deposited at 300[Formula: see text]C of substrate temperature by plasma enhanced chemical vapor deposition. RF power was varied (5–50[Formula: see text]W), and its aftereffect on the optical properties of thin films was investigated. By increasing the RF power between 5[Formula: see text]W and 25[Formula: see text]W, main PL peak showed a red shift with an increase in PL intensity, which is associated with an increase in the silicon nanocrystals size and density, respectively. Results obtained were confirmed with High-resolution transmission electron microscopy micrographs and from the statistical calculations. By attaining a precise RF power value, stable silicon nitride thin film with suitable optical properties can be achieved for the potential fabrication of optoelectronic devices.

To obtain an optimum absorption layer based on hydrogenated polymorphous and nanocrystalline silicon thin films in a plasma-enhanced chemical vapor deposition, radio frequency (RF) power was varied from 25[Formula: see text]W to 100[Formula: see text]W using a mixture of dichlorosilane and hydrogen. By Raman spectroscopy, the crystalline fraction was found to be varied from 7% to 69%, and RF power value of 75[Formula: see text]W was found to be suitable with an appropriate mixture of amorphous and crystalline phases, respectively. Thickness measurements performed by profilometry were cross-checked with the value obtained from the cross-sectional scanning electron microscopy micrographs. Micrographs obtained using high-resolution transmission electron microscopy confirmed the presence of silicon nanocrystals in the range of 2–5[Formula: see text]nm with a strong probability of confinement effect. B and gap value of 1.55[Formula: see text]eV at 75[Formula: see text]W upheld the suitability of this particular RF power for active absorption layer, which has also shown maximum photosensitivity.

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