We propose and implement a promising fabrication technology for geometrically well-defined single-electron transistors based on a silicon-on-insulator quantum wire and side-wall depletion gates. The 30-nm-wide silicon quantum wire is defined by a combination of conventional photolithography and process technology, called a side-wall patterning method, and depletion gates for two tunnel junctions are formed by the doped polycrystalline silicon sidewall. The good uniformity of the wire suppresses unexpected potential barriers. The fabricated device shows clear single-electron tunneling phenomena by an electrostatically defined single island at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions.

In this paper we proposed for the first time a technique of poly‐methylmethacrylate (PMMA) buffer layer insertion to overcome unsaturated output characteristics of OTFTs with cross‐linked poly‐vinylalcohol (PVA) gate insulators on a PET substrate. A 3:1 diluted PMMA buffer layer insertion resulted in saturated output characteristics and small shift of a threshold voltage in successive I‐V measurements for OTFTs due to the enhancement of surface hydrophobicity on the gate insulator. The electrical performances of a threshold voltage, a subthreshold slope and on‐off current ratio have been noticeably improved after PMMA buffer layers insertion. To our best knowledge, the highest mobility of 0.32 cm2/Vsec has been obtained among OTFTs fabricated with polymer gate insulators by spin coating processes on a PET substrate.

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A phosphor screen which operates at low excitation energy must show good emission efficiency and sustain stabilities against high vacuum and high current density operation. In this study, low voltage phosphors suitable for FED applications were experimentally addressed and screened onto ITO-glass by the electrophoretic deposition which offers several advantages, including easy control of film thickness and high packing density. Process variables such as deposition rate, salt concentration, etc., in electrophoretic deposition method were optimized to achieve high quality of the screens. Correlations of process variables with particle size, surface morphology and luminescent properties of phosphors will be presented. Particularly, much attention was put on the optimization of phosphor screens for the maximal CL intensities and adhesion of particles over substrate when excited by field emitter arrays.