Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistor The depth dependent carrier density was measured on an arsenic implanted silicon sample using scanning capacitance microscopy ͑SCM͒. The capacitance versus voltage scan was performed by applying dc biases with a dither ac signal. A strong dc bias dependence was observed at the interface of an abrupt junction between n ϩ and p. The bias dependent SCM images show good agreement with quasi-three dimensional simulations, suggesting that they can be used to map a device structure.