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Different numerical optimization strategies were used to find an optimized parameter setting for the sheet metal forming process. A parameterization of a time-dependent blank-holder force was used to control the deep-drawing simulation. Besides the already well-established gradient and direct search algorithms and the response surface method the novel Kriging approach was used as an optimization strategy. Results for two analytical and two sheet metal forming test problems reveal that the new Kriging approach leads to a fast and stable convergence of the optimization process. Parallel simulation is perfectly supported by this method

The effects of electron-electron interaction on the electron distribution, substrate current, and gate current in short n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using the local iterative Monte Carlo (LIMC) approach. The complete distribution function is always available at each step of this approach and with reduced noise with respect to standard Monte Carlo (MC) simulation. Therefore, electron-electron interaction can be evaluated efficiently using scattering rates, allowing one to examine hot carrier effects that may play an important role for device reliability and characterization. Results for MOSFETs with channel length as short as 25 mn show that electron-electron interaction leads to an increase of the high energy tail of the electron distributions at the transition from channel to drain. The electron density around 3 eV is significantly increased even if the applied voltage is in the 1.0 V range

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