Full-band Monte Carlo investigation of hot carrier trends in the scaling of metal-oxide-semiconductor field-effect transistors

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

“…As a result of vertical field in the gate, the holes and electrons were separated and either injected into the gate dielectric or ejected into the transistor substrate (Duncan et al, 1998). Table III, the hot hole injection into the passivation dielectric of the APD is similar to the hot carrier injection into the gate oxide of the IC transistor.…”

Influence of defects on elastic gate tunneling currents through ultrathin SiO2gate oxides: predictions from microscopic models

“…Third, we have employed full-band Monte-Carlo calculations [34,40] to obtain electron distribution functions and electron densities along the channel of the MOSFET. For the present work, we have only considered distribution functions obtained from a transistor simulation in the saturation regime, with V Gate-Source = V Drain-Source = 1.2 V. Gate current densities j (x) as a function of a coordinate x along the gate oxide that runs from source to drain have been obtained as…”

Reliability of silicon integrated circuits

“…When the transistor is turned on with appropriate gate and drain bias, degradation of the transistors parameters such as V th , transconductance (g m ), and linear drain current (Id lin ) occurs [52][53][54][55][56][57][58][59]. In this case, the degradation is caused by charge trapping in the drain region of the transistor [52,53].…”