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Layered materials such as graphene, bi-, and multilayer graphene as well as various compounds of topological insulators are currently in the focus of interest due to their extraordinary physical properties related to Dirac surface states. The ability to grow thin films of these complex layered materials is the key to explore their fundamental phenomena giving insights into modern solid-state physics. However, complex materials composed of layers only weakly bonded via van der Waals forces offer unmatched challenges for the deposition of thin epitaxial films. Here, we report on the growth of Bi 2 Te 3 ultrathin films on Si (111) substrates using molecular beam epitaxy. Special emphasis is put on the nucleation phenomena and growth dynamics studied in detail by in situ scanning tunnelling microscopy and high-resolution scanning transmission electron microscopy. The morphology of the Bi 2 Te 3 surface and the structure of the Si(111)/Bi 2 Te 3 interface as well as the formation of threading dislocations and crystal domains are studied at the atomic level. Our data indicate that the film is formed via the nucleation of islands, which float on the substrate; thus, the islands are only weakly bonded to the substrate and rather mobile. Apparently, these floating islands are able to arrange themselves by moving in the x−y direction to perfectly coalesce and form a continuous film. The results present a crucial step toward understanding growth and defect formation in this class of materials and thus pave the avenue to a higher control over both their structural and electronic properties, in order to study the electronic properties of the Dirac surface states.

A series of nine dipolar merocyanine dyes has been studied as organic semiconductors in transistors and solar cells. These dyes exhibited single-crystal packing motifs with different dimensional ordering, which can be correlated to the performance of the studied devices. Hereby, the long-range ordering of the dyes in staircase-like slipped stacks with J-type excitonic coupling favors charge transport and improves solar cell performance. The different morphologies of transistor thin films and solar cell active layers were investigated by UV-vis, AFM, and XRD experiments. Selenium-containing donor-acceptor (D-A) dimethine dye 4 showed the highest hole mobility of 0.08 cm(2) V(-1) s(-1). BHJ solar cells based on dye 4 were optimized by taking advantage of the high crystallinity of the donor material and afforded a PCE of up to 6.2%.

The magnitude of electron spin polarization in topologically protected surface states is an important parameter with respect to spintronics applications. In order to analyze the warped spin texture in Bi 2 Te 3 thin films, we combine angle-and spin-resolved photoemission experiments with theoretical ab initio calculations. We find an in-plane spin polarization of up to ∼45% in the topologically protected Dirac cone states near the Fermi level. The Fermi surface of the Dirac cone state is warped and shows an out-of-plane spin polarization of ∼15%. These findings are in quantitative agreement with dedicated simulations which find electron density of the Dirac cone delocalized over the first quintuple layer with spin reversal occurring in the surface atomic layer.