Low-temperature polycrystalline silicon (poly-Si) thin-film transistor lateral double-diffusion metal-oxide-semiconductor field-effect transistors (LTPS TFT LDMOSFETs) and lateral insulated-gate bipolar transistors (LIGBTs) were fabricated by combining a thin-film transistor with a power structure, three-step drift doping, and excimer laser annealing. The maximum breakdown voltage of the three-step drift-doped LTPS-LDMOS after excimer laser annealing is 286 V with a 35 mm drift region length (L drift). The specific on-resistance is low (approximately 9 cm 2) and the ON/OFF current ratio is about 1:28 Â 10 6 with L drift ¼ 15 mm. The subthreshold swing (SS) is about 1 V/ decade. Comparing the three-step drift-doped LDMOS with the three-step drift-doped LIGBT under the same processing conditions clearly indicates that the breakdown voltage and current capacity of LIGBT exceeds those of LDMOS.

The purpose of this study was to develop the anodized titanium oxide nanotubes (ATONs) as a pH electrode with amperometric and potentiometric method. Titanium oxide nanotubes film was produced on pure titanium piece by titanium anodization at room temperature. The best one ATONs electrode has a linear pH response approximately 53 mV/pH with potentiometric method and 13 A/pH with amperometric method in the concentration range between pH 2 and 12.

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