Superjunction devices are reported to provide better high-voltage operation characteristics than conventional abrupt junction devices in silicon power applications. In this study, the superjunction reduced surface field (SJ-RESURF) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) is fabricated on a bulk silicon wafer to improve the operating characteristics of high-voltage devices. By introducing the p-type strips in the drift region, higher doping concentration of the drift region can be adopted to reduce the conduction resistance. The SJ-RESURF LDMOSFET with a specific on-resistance of 3.53 Ámm 2 , a breakdown voltage of 335 V and a drift length of 30 mm, is demonstrated; its turn onresistance is 25% better than that of the conventional structure. The turn-on resistance, breakdown behavior, device geometry, temperature, and charge balance mechanics of the SJ-RESURF LDMOSFET are examined herein.

Low-temperature poly-Si lateral double-diffused metal oxide semiconductor ͑LTPS LDMOS͒ with high voltage and very low on-resistance has been achieved using excimer laser crystallization at 400°C substrate heating for the first time. The ON/OFF current ratios were 2.96 ϫ 10 5 and 6.72 ϫ 10 6 while operating at V ds ϭ 0.1 and 10 V, respectively. The maximum current limit was up to 10 mA and maximum power limit could be enhanced over 1 W at V ds ϭ 90 V and V gs ϭ 20 V. The R on,sp with dimensions of W/L ch ϭ 600 m/12 m could be significantly decreased 6.67 ϫ 10 2 times in magnitude as compared with conventional offset drain thin-film-transistors.

No abstract

Low-temperature polycrystalline silicon (poly-Si) thin-film transistor lateral double-diffusion metal-oxide-semiconductor field-effect transistors (LTPS TFT LDMOSFETs) and lateral insulated-gate bipolar transistors (LIGBTs) were fabricated by combining a thin-film transistor with a power structure, three-step drift doping, and excimer laser annealing. The maximum breakdown voltage of the three-step drift-doped LTPS-LDMOS after excimer laser annealing is 286 V with a 35 mm drift region length (L drift). The specific on-resistance is low (approximately 9 cm 2) and the ON/OFF current ratio is about 1:28 Â 10 6 with L drift ¼ 15 mm. The subthreshold swing (SS) is about 1 V/ decade. Comparing the three-step drift-doped LDMOS with the three-step drift-doped LIGBT under the same processing conditions clearly indicates that the breakdown voltage and current capacity of LIGBT exceeds those of LDMOS.

No abstract