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Superjunction devices are reported to provide better high-voltage operation characteristics than conventional abrupt junction devices in silicon power applications. In this study, the superjunction reduced surface field (SJ-RESURF) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) is fabricated on a bulk silicon wafer to improve the operating characteristics of high-voltage devices. By introducing the p-type strips in the drift region, higher doping concentration of the drift region can be adopted to reduce the conduction resistance. The SJ-RESURF LDMOSFET with a specific on-resistance of 3.53 Ámm 2 , a breakdown voltage of 335 V and a drift length of 30 mm, is demonstrated; its turn onresistance is 25% better than that of the conventional structure. The turn-on resistance, breakdown behavior, device geometry, temperature, and charge balance mechanics of the SJ-RESURF LDMOSFET are examined herein.

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Low-temperature poly-Si lateral double-diffused metal oxide semiconductor ͑LTPS LDMOS͒ with high voltage and very low on-resistance has been achieved using excimer laser crystallization at 400°C substrate heating for the first time. The ON/OFF current ratios were 2.96 ϫ 10 5 and 6.72 ϫ 10 6 while operating at V ds ϭ 0.1 and 10 V, respectively. The maximum current limit was up to 10 mA and maximum power limit could be enhanced over 1 W at V ds ϭ 90 V and V gs ϭ 20 V. The R on,sp with dimensions of W/L ch ϭ 600 m/12 m could be significantly decreased 6.67 ϫ 10 2 times in magnitude as compared with conventional offset drain thin-film-transistors.