Growth of single-domain GaAs (100) layers on double-domain Si (100) substrates by molecular beam epitaxy has been investigated. It has been shown that domain orientation of the top layer of GaAs depends on the surface structure of a buffer layer. The size of atomic step heights on the Si surface and the As-Si interaction temperature before film growth are not important factors in controlling domain orientation. Suppression of an antiphase disorder is explained in terms of nonstoichiometric antiphase boundary annihilation operative during growth.

The majority carrier traps formed in p-GaInP following room temperature irradiation with 3.1 MeV protons have been investigated using deep level transient Fourier spectroscopy. The radiation damage consists of several closely spaced peaks, one of which may have existed in the as-grown material. Energy levels of three of these new traps are reported although in the presence of such closely spaced peaks the energy parameters could only be reliably measured after annealing was used to eliminate shoulder peaks. The spectrum and its annealing behavior are explainable in terms of GaP and InP levels being superimposed. Among the observed peaks, two of the radiation induced levels have been associated with a gallium vacancy defect and a phosphorous Frenkel.

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A method to reduce the density of oval defects originating from pregrowth surface particulates and other contaminants for GaAs layers grown by molecular beam epitaxy (MBE) is presented. It appears that if a thin GaAs buffer layer is deposited by alternately supplying Ga atoms and As4 molecules to a GaAs substrate, prior to further growth by MBE, the density of the oval defects in the final layer is reduced reproducibly by a factor of 7, from about 490 to 70 cm−2, when compared with that obtained using MBE alone under closely similar conditions. The improved surface morphology produced by the pulsed beam method is thought to be related to initial film growth which proceeds likely in a two-dimensional layer-by-layer fashion.

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