GaInP/AlInP tunnel junction for GaInP/GaAstandem solar cells

Li, W.; Lammasniemi, J.; Kazantsev, A. B.; Jaakkola, R.; Mäkelä, Teemu; Pessa, M.

doi:10.1049/el:19980324

Cited by 12 publications

(4 citation statements)

References 2 publications

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“…In the past years, epitaxial AlInP lattice matched to GaAs has been studied for the applications such as window/anti-reflection (AR) layer of GaInP/GaAs multi-junction solar cells (Takamoto et al 1997; Karam et al 2001) and cladding layer of visible lasers and modulators (Murata et al 1991), mainly by using metal-organic chemical vapor deposition (MOCVD) techniques. The GSMBE growth of relative thin AlInP layers for the tunnel junction or window/AR layer of tandem solar cells have also been reported (Li et al 1998). Recently, AlInP has been found with great potential to demonstrate very low dark current avalanche photodiodes (APD) (Ong et al 2011).…”

Section: Gas Source Mbe Growth Of Gainp and Alinp Ternary Alloysmentioning

confidence: 95%

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

Zhang¹,

Gu²

2012

Photodiodes - From Fundamentals to Applications

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Section: Gas Source Mbe Growth Of Gainp and Alinp Ternary Alloysmentioning

confidence: 95%

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

Zhang¹,

Gu²

2012

Photodiodes - From Fundamentals to Applications

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“…The different cells in a MJ structure are interconnected by tunnel junctions (TJ), 58,59 thin (about 10nm) heavily doped pþ-nþ layers, which offer a low resistance to current flow. When forward biased, and below a certain current threshold, TJ behaves like a low-value resistor.…”

Section: Ingapmentioning

confidence: 99%

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Bosi

Pelosi

2006

Progress in Photovoltaics

177

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III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article will review the situation of semiconductor solar cell materials, focusing on Si, GaAs, InGaP and multijunction solar cells and will discuss future trends and possibilities of bringing III-V technology from space to Earth

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“…Though the creation of tandem and multijunction cells is a common efficiency boosting technique in solar PV, similar outcomes can be achieved in TPV with spectral control rather than difficult epitaxial growths. Even so, GaInP/GaAs , AlGaAsSb/GaSb , GaInAsSb/InAsSb , and other heterojunction TPV cells have been reported. Theoretical studies have shown multijonction TPV diodes could achieve higher efficiencies than single junction cells and help mitigate the power versus efficiency tradeoff that often occurs in TPV systems .…”

Section: Introductionmentioning

confidence: 99%

Selective emitters for thermophotovoltaic applications

Pfiester¹,

Vandervelde

2016

Physica Status Solidi (a)

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Applying thermophotovoltaic (TPV) technologies to existing energy generators allows us to increase energy output while utilizing present infrastructure by reclaiming the heat lost during the production process. In order to maximize the efficiency of these sources, the conversion efficiency of the TPV system needs to be optimized. Selective emitters are often used to tailor the spectrum of incident light on the diode, blocking any undesirable light that may lead to device heating or recombination. Over the years, many different technologies have been researched to create an ideal selective emitter. Plasmas and rare‐earth emitters provided highly selective spectra early on, but their fixed peaks required tailoring the diode's band gap to the emitter's characteristic wavelength. Recent advances in engineerable materials, such as photonic crystals and metamaterials, allow the opposite to take place; an appropriate selective emitter can be designed to match the TPV diode, allowing the diode structure to be optimized independently from the emitter.

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GaInP/AlInP tunnel junction for GaInP/GaAstandem solar cells

Cited by 12 publications

References 2 publications

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Selective emitters for thermophotovoltaic applications

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