We report the electrochemical growth of gold nanowires with controlled dimensions and
crystallinity. By systematically varying the deposition conditions, both polycrystalline and
single-crystalline wires with diameters between 20 and 100 nm are successfully synthesized in
etched ion-track membranes. The nanowires are characterized using scanning electron
microscopy, high resolution transmission electron microscopy, scanning tunnelling
microscopy and x-ray diffraction. The influence of the deposition parameters, especially
those of the electrolyte, on the nanowire structure is investigated. Gold sulfite electrolytes
lead to polycrystalline structure at the temperatures and voltages employed. In contrast,
gold cyanide solution favours the growth of single crystals at temperatures between 50 and
65 °C
under both direct current and reverse pulse current deposition conditions. The
single-crystalline wires possess a [110] preferred orientation.
Cobalt nanowires with controlled diameters have been synthesized using electrochemical deposition in etched ion-track polycarbonate membranes. Structural characterization of these nanowires with diameter 70, 90, 120 nm and length 30 μm was performed by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray diffraction techniques. The as-prepared wires show uniform diameter along the whole length and X-ray diffraction analysis reveals that [002] texture of these wires become more pronounced as diameter is reduced. Magnetic characterization of the nanowires shows a clear difference of squareness and coercivity between parallel and perpendicular orientations of the wires with respect to the applied field direction. In case of parallel applied field, the coercivity has been found to be decreasing with increasing diameter of the wires while in perpendicular case; the coercivity observes lower values for larger diameter. The results are explained by taking into account the magnetocrystalline and shape anisotropies with respect to the applied field and domain transformation mechanism when single domain limit is surpassed.
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