A new MOS gate-controlled power switch with a very low on-resistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n--epitaxial layer grown on a p + substrate. In operation, the epitaxial region is conductivity modulated (by excess holes and electrons) thereby eliminating a major component of the on-resistance. For example, on-resistance values have been reduced by a factor of about 10 compared with those of conventional n-channel power MOSFET's of comparable size and voltage capability.

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A bi-directional double-side, double-gate IGBT fabricated through a direct wafer bonding process is characterized. As a result of the symmetrical geometry the transistors have lower V,,,,,,,, however, with the aid of the second MOS gate the switching dissipation is as low as that of the conventionallygated reference IGBT. Overall, the DlGBT gives a V,,(sat)-EopF trade-off improvement of 40% over the reference singleside IGBT.

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