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We report on broadband dielectric spectroscopy on the one-dimensional semiconductor (NbSe 4) 3 I. Below the structural phase transition close to 270 K we observe colossal dielectric constants with a frequency and temperature dependence very similar to what is observed in canonical charge-density wave systems. Guided by structural details we interpret this structural phase transition as driven by complex charge-order processes.

anodic transfer coefficient cathodic transfer coefficient eigenvalues of PDE, (n -1/2)~/~ pore aspect ratio, L/(d/2) nF2~Co ~ KRT (d/2)io Co~ zeroes of the Bessel function, Jl(u) nF dimensionless overpotential, R-~ (qbl -~P2) amplitude of imposed overpotential function steady-state overpotential dimensionless overpotential at the pore wall, Eq. [7] C-C ~ dimensionless concentration,-C ~ steady-state concentration dimensionless concentration at the pore wall, Eq. [5] solution conductivity, ~1-1 cm -1 ratio of the diffusion time scale to the double-layer charging time scale, Eq. [32] ~I~(~n)/Io(~)

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Thermal oxidation (300 °C, air) of magnetron sputtered NbNx thin films on transparent substrates (sapphire, glass, Sb‐doped SnO2, Sn‐doped In2O3) yields amorphous Nb2O5 films with promising ECC properties (studied in aqueous H2SO4).