Abstract. Multi-gate FET, e.g. FinFET devices are the most promising contenders to replace bulk FETs in sub-45 nm CMOS technologies due to their improved sub threshold and short channel behavior, associated with low leakage currents. The introduction of novel gate stack materials (e.g. metal gate, high-k dielectric) and modified device architectures (e.g. fully depleted, undoped fins) affect the analog device properties significantly. First measurements indicate enhanced intrinsic gain (gm/gDS) and promising matching behavior of FinFETs. The resulting benefits regarding the speed-accuracy-power trade-off in analog circuit design will be shown in this work. Additionally novel device specific effects will be discussed. The hysteresis effect caused by charge trapping in high-k dielectrics or self-heating due to the high thermal resistor of the BOX isolation are possible challenges for analog design in these emerging technologies. To gain an early assessment of the impact of such parasitic effects SPICE based models are derived and applied in analog building blocks.